发明名称 |
Method and apparatus for depositing an etch stop layer |
摘要 |
A method and apparatus for depositing an etch stop layer. The method begins by introducing process gases into a processing chamber in which a substrate is disposed. An etch stop layer is then deposited over the substrate. An overlying layer is then deposited over the etch stop layer. The etch stop layer substantially protects underlying materials from the etchants used in patterning the overlying layer. Moreover, the etch stop layer also possesses advantageous optical characteristics, making it suitable for use as an antireflective coating in the patterning of layers underlying the etch stop layer.
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申请公布号 |
US6127262(A) |
申请公布日期 |
2000.10.03 |
申请号 |
US19970852787 |
申请日期 |
1997.05.07 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
HUANG, JUDY H.;YAU, WAI-FAN;CHEUNG, DAVID;YANG, CHAN-LON |
分类号 |
H01L21/302;C23C16/30;C23C16/34;C23C16/52;G03F7/09;H01L21/027;H01L21/3065;H01L21/311;H01L21/316;H01L21/3205;H01L21/768;(IPC1-7):H01L21/316 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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