| 摘要 |
PROBLEM TO BE SOLVED: To enable formation of a satisfactory embedded type node electrode in a deep trench. SOLUTION: In this manufacturing method, a deep trench 3 is formed in a silicon substrate 1, and the internal surface of the trench 3 is covered with a polycrystalline silicon thin film (liner film) 6, so as not to blockade the trench 3. A silicon germanium film (node electrode) 7 is formed on the polycrystalline silicon thin film 6 not to blockade the trench 3, by heat-treating the silicon germanium film 7, only the film 7 is fluidized so as to fill the trench 3. |
