| 摘要 |
<p>PROBLEM TO BE SOLVED: To realize an accurate exposure pattern by exactly obtaining optimum exposure corresponding to the change of the sensitivity of a resist. SOLUTION: A chip pattern and a pattern for measuring sensitivity are exposed on the resist (S1), the film thickness of a part on which the pattern for measuring sensitivity on the resist is exposed is measured (S2), and correction exposure is decided from the measured result and a resist film thickness and exposure table previously obtained (S3), then, correction exposure is performed with the correction exposure (S4).</p> |
