| 摘要 |
<p>PROBLEM TO BE SOLVED: To obtain a plasma CVD film forming device for forming a film on a semiconductor substrate to make the film quality and film thickness of a thin film uniform. SOLUTION: A plasma CVD film forming device for forming a thin film on a semiconductor substrate is provided. The device consists of a vacuum chamber 1, a shower head 20 installed inside a vacuum chamber and a susceptor 3, whereon a treatment body installed practically in parallel counterposed to a shower head inside a vacuum chamber is mounted. A surface of revolution electrode, wherein a central part of a shower head and/or a susceptor is recessed, is constituted.</p> |
