SEMICONDUCTOR DEVICE AND ITS FORMING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device having high reliability by arranging TFTs(thin film transistors) of suitable structure according to circuit function. SOLUTION: In a semiconductor device, having a drive circuit part and a pixel part on the same substrate, gate insulating films 115, 116 of a drive TFT are designed to be thinner than the gate insulating film 117 of a pixel element TFT. The gate insulating films 115, 116 of the drive TFT and dielectrics 118 of a holding capacitance are formed simultaneously, so that the dielectrics 118 is very thin and large capacity can be ensured.