SEMICONDUCTOR DEVICE AND ITS FORMING METHOD

摘要

PROBLEM TO BE SOLVED: To realize a semiconductor device of high TFT(thin film transistor) characteristic. SOLUTION: In a pixel matrix circuit of an AM-LCD, resistance is reduced by making a lower electrode 114 of holding capacitance contain group 15 elements and catalytic elements which have been used for crystallization, and capacitance is increased by thinning dielectrics of the holding capacitance, without increasing the area for forming a capacitor. Thereby sufficient holding capacitance can be ensured in an AM-LCD, whose width cross corners is at most one inch, without decreasing open area ratio.