| 摘要 |
PROBLEM TO BE SOLVED: To define the region for inspection of defects, and to make a pattern to restrict a light-shielding region smaller than the resolution limit of a reduction stepper. SOLUTION: The slit 3 is composed of a line-and-space pattern P having a pitch smaller than the resolution limit of the reducing stepper. The line-and- space pattern P which constitutes the slit 3 is formed in stripes. Since the line- and-space pattern P is smaller than the resolution limit of the reducing stepper, an image can not be focused through the pattern P onto a wafer, and thereby no problem is caused for exposure. Even when the light shielding region 2 is illuminated by stray light produced by the reticle illumination optical system of the reducing stepper, the image of the line-and-space pattern P on the semiconductor wafer can be prevented. Since the line-and-space pattern P is a periodical pattern, it has high visibility for visual check with an optical microscope, and the region for inspection of defects can be defined. |
