| 摘要 |
PROBLEM TO BE SOLVED: To obtain a method for forming patterns and a method for manufacturing semiconductor devices, which reduce the lowering of an etching rate accompanying the advance of dry etching and can form an etching pattern with an enhanced aspect ratio for a member to be processed. SOLUTION: On execution of a mask forming process, wherein a mask pattern 1 is formed on a member 2 to be processed and an etching process wherein a recess in a desired depth is formed by dry etching in the member to be processed with the mask pattern 1 used, a peeling process wherein an etching deposit 3 brought about by the dry etching is peeled off form the member 2 is executed in the course of the etching process, according to this method of forming the pattern.
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