| 摘要 |
PROBLEM TO BE SOLVED: To readily control the depth of a groove in a plane of a wafer without causing an etching step by a method wherein, after a contact hole of a silicon oxide film is formed in a columnar and grooved shape, an organic silicon oxide film is coated, and the silicon oxide film is removed by wet-etching. SOLUTION: A silicon oxide film is formed on a wiring 6 coated with a silicon oxide film 5, and an organic silicon oxide film 4 is used as an interlayer insulation film between wirings 6. Next, after a columnar body 3 of a silicon oxide is made on the wiring 6 by etching, the organic silicon oxide film 4 is deposited and buried. Next, after a silicon oxide film 3' and a wiring of the silicon oxide film 3' are formed, an organic silicon oxide film 4' is buried. After the organic silicon oxide film 4' is buried, the silicon oxide films 3, 3' are removed with a rare fluoric acid. Thus, a dual Damascene structure can be formed, and after formed, a silicon nitride film is etched, and a barrier metal 7 is coated and a wiring material 8 is buried. |
