| 摘要 |
PROBLEM TO BE SOLVED: To prevent the occurrence of a defective semiconductor chip caused in an overlapping TCP semiconductor device due to the break of a passivation film or oxidized film, by reducing the stress in the curing stage of a potting resin and applied to the main surface of the chip. SOLUTION: In an overlapping TCP semiconductor device 10, an elastic film 7 is provided on the surface of an insulating film 2 on the side of the main surface of a semiconductor chip 1. The silicon oxide filler contained in a supplied potting resin 6 also flows in the clearance S between the chip 1 and film 2. In the curing process of the resin 6, the volume of the resin 6 and the clearance S between the chip 1 and film 2 are reduced. The filler having a relatively large size is sandwiched between the main surface of the chip 1 and the insulating film 2 and gives a stress to the main surface of the chip 1. However, since the elastic film 7 is provided on the surface of the film 2 which is in contact with the filler, the stress applied to the chip 1 is reduced.
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