| 摘要 |
PROBLEM TO BE SOLVED: To form a semiconductor laser and a photodiode in the same substrate by providing an etching stop layer inside an upper multilayer film reflection mirror layer of a region used as a photodiode and etching a region which is used as a photodiode until a surface of the stop layer is exposed. SOLUTION: In a surface light emission type semiconductor laser 52, a buffer layer 11 is provided on a substrate 10, and an n-type lower multilayer reflection mirror layer 12 is provided on the buffer layer 11. A first spacer layer 14, an i-type quantum well active layer 16 and a second spacer layer 18 are laminated thereon and an active layer 30 is formed. An etching stop layer 26 is provided between a first upper multilayer film reflection mirror layer 24 and a second upper multilayer film reflection mirror layer 27 on the active layer 30. A region which is used as a photodiode 54 is etched until a surface of the etching stop layer 26 is exposed.
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