| 摘要 |
PROBLEM TO BE SOLVED: To improve possibility of cleavage and the fine machining accuracy, without increasing the process step number. SOLUTION: In a semiconductor light emitting element having electrodes including a Pt layer adjacent an Au layer 14, a Ti layer 12 of 50 nm, a Pt-Mo layer 13 of 50 nm, an Au layer 14 of 300 nm are laminated on a P-GaAs cap layer 9. The Pt-Mo layer 13 is deposited with a Mo concentration set for the highest cleavage possibility of 25% in an evaporation source. It is sintered over 400 deg.C to form an ohmic electrode. Mo which is also has a high melting point metal similar to Ti and Pt but is less reactive with Au is added to the Pt layer, so that the mutual diffusion decreases between the Au layer 14 and the Pt layer due to heat treatment, no Au-Pt alloy appears, and the cleavage is easy to improve cleavage possibility and the wet etched shape of the Au layer 14 becomes satisfactory because of a columnar crystal state of the Pt-Mo layer 13. There is also the advantage that the contact resistance of the electrodes becomes small.
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