| 摘要 |
PROBLEM TO BE SOLVED: To substantially remove the influence of the facet occurring in the silicon epitaxial growth film which is the sacrificial layer of a metal silicon film made on a source/drain region. SOLUTION: This manufacturing method makes the sidewall insulating film provided at the flank of a polysilicon gate electrode 23 provided on a semiconductor substrate 21 into a laminated structure of a silicon oxide film 25 and a silicon nitride film 24 from the top, and causes a silicon epitaxial growth film 28 to selectively grow on the exposed semiconductor substrate, and causes a polysilicon film 29 to grow on the silicon nitride film 24, and causes a silicon epitaxial growth film to grow selectively on the semiconductor substrate exposed on such growth condition so as not to cause a silicon film to grow on the silicon oxide film 25. By this method, the polyslicon film 29 joins the facet face made at the flank of the growth film, and the facet form of the growth film substantially ceases to appear.
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