NONVOLATILE SEMICONDUCTOR STORAGE DEVICE

摘要

PROBLEM TO BE SOLVED: To prevent an excess current from flowing to a source contact and an integrated density from being lowered by assigning a plurality of I/O sections, that is, a plurality of blocks between adjacent source line contacts and controlling so that write of '0' data attended with injection of electrons is not performed to a memory cell belonging to the adjacent I/O sections. SOLUTION: A write time control circuit 10 outputs a 1st (2nd) write control signal that reaches a low level at a first half (latter half) of a half time width TW/2 (TW is a full time width) through a 1st (2nd) write line 11 (12). Eight '0' write data are simultaneously given to 8 OR gates, where the signals are ORed with the 1st and 2nd write control signals and from which separate write input data Din0 (I/O)0-Din7 (I/O)7 are outputted. As the 1st and 2nd write input data, provide '0' data and '1' data are alternatingly inputted to adjacent I/O.