| 摘要 |
PROBLEM TO BE SOLVED: To obtain a vertical section in a treated shape, when an antireflection film formed of at least two separate layers of at least two kinds of polysilanes is dry-etched with a resist pattern used as a mask and thereby to enable control of the influence of microloading effects produced by a reaction product in etching. SOLUTION: This method is provided with a process, wherein at least two kinds of organic silicon films 121 and 122 containing silicon and an organic silicon compound, having a bonding with silicon in a main chain are formed into two separate layers at least, as an antireflection film for forming a resist pattern, on a film 11 to be treated which is provided on a semiconductor substrate 10 and an etching process, wherein the pattern of a resist 13 is formed on the organic silicon film and the organic silicon film is dry-etched with this pattern of the resist used as a mask.
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