发明名称 SEMICONDUCTOR MEMORY AND ITS ADDRESS ALLOTTING METHOD
摘要 PROBLEM TO BE SOLVED: To obtain a semiconductor memory and its address allotting method that can effectively utilized a spare memory cell array for redundancy when a defect does not exist. SOLUTION: This device is characterized in that an address of a normal memory cell array 21 is previously allotted to a spare memory cell array 22 for redundancy. When a defect occurs in a normal cell region, its defective address is allotted to a memory cell for redundancy, and it is replaced with an address allotted to a memory cell for redundancy before the replacement. When a defect does not exist or it is very few even if it exists, read-out margin exists, since bit line capacity is small, and a spare memory cell array 22 for redundancy in which a consumption current is small in bit line restoring can be effectively utilized.
申请公布号 JP2000268597(A) 申请公布日期 2000.09.29
申请号 JP19990075715 申请日期 1999.03.19
申请人 TOSHIBA MICROELECTRONICS CORP;TOSHIBA CORP 发明人 ISHIZUKA KENJI;MURAOKA KAZUYOSHI;HAYASHI SHINTARO;HAMADA MAKOTO;KOTANI RIYOUSHI
分类号 G11C29/04;G11C29/00;(IPC1-7):G11C29/00 主分类号 G11C29/04
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