| 摘要 |
PROBLEM TO BE SOLVED: To obtain a fine pattern forming material and a method to form a fine pattern using this material so that the material shows good storage stability and proper crosslinking reaction property when used to form a finer resist pattern by an usual lithographic technique. SOLUTION: The fine pattern forming material is prepared by dissolving a crosslinking agent completely soluble with water selected from glycol lauryl having at least one imino group with hydroxyalkyl group substituted for a hydrogen atom, and a water-soluble resin in a water-based solvent. In the process to form a fine pattern, a resist pattern is formed from a chemically amplifying resist containing an acid producing agent on a substrate, forming a coating film of the fine pattern forming material thereon, heating to form a water- insoluble reaction layer on the interface between the resist pattern and the coating film and then removing the unreacted part of the coating film with a water-based solvent. |
