发明名称 LITHOGRAPHY PROJECTION SYSTEM
摘要 PROBLEM TO BE SOLVED: To obtain an arch-like or ring-like irradiation beam by providing a scattering device, which checks diffusion of irradiation beam to a projection system with which the pattern image of a mask in a lithography projection system is irradiated on a substrate and forming a fan-like curved line by reflecting a fine collimated incident beam. SOLUTION: In a lithography projection system, for example, for ultraviolet light of wavelength of 13 nm is generated by an undulater 10 of an electron storage ring. The reflection light is collected by a first repeapting mirror 13, and the image of a constriction part of a light source is formed in an intermediate plane. In the intermediate plane, a first scattering mirror 14 is provided and increases the diffusion of irradiated light beam inside at least one plane. A second repeating mirror 15 forms the image of a first scattering mirror image on an incident pupil 18 in a projection system of a lithography system. A second scattering mirror 16 folds the projection beam and sends it onto a mask 17 and further increases the diffusion of reflected light beam. The second scattering mirror can be combined with the second repeating mirror.
申请公布号 JP2000269130(A) 申请公布日期 2000.09.29
申请号 JP20000065234 申请日期 2000.03.09
申请人 ASM LITHOGRAPHY BV 发明人 KRUIZINGA BORGERT;ESCUDERO ZANZ ISABEL
分类号 G02B5/02;G02B5/08;G02B19/00;G03F7/20;H01L21/027;(IPC1-7):H01L21/027 主分类号 G02B5/02
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