| 摘要 |
PROBLEM TO BE SOLVED: To increase a capacity change quantity of an electrostatic capacity type sensor, and to improve sensitivity. SOLUTION: A frame 2, a deadweight 3, a beam 4, moving electrodes 15, fixed electrodes 16 or the like are formed on a silicon substrate 1. The moving electrode 15 and the fixed electrode 16 are formed in a comb tooth shape so as to engage with each other, and projections and recessions are formed in the vertical direction to the electrode face, to obtain a capacity change quantity corresponding to the number of the projections and the recessions from each comb tooth. Three projection parts are formed in this figure to increase as much as triple capacity change quantity (3Δc).
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