| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor storage device and its manufacturing method which comprises such gate structure as no electric field concentrates on an edge part in the gate width direction of a gate electrode for reducing the electric charges in an oxide film induced by an electric stress. SOLUTION: An element region formed on a main surface of a semiconductor substrate 10, an element separation region comprising an embedded insulating film 17 of a semiconductor substrate groove part, a gate insulating film 11 formed in the element region, and a gate electrode 12 on the gate insulating film 11, are provided. Here, the end part in the gate width direction of the gate electrode 12 at least extends in the element separation region. At least in a region extending on the element separation region of the gate electrode 12, nitrogen atom forms a dope region 21. An electric field is distributed evenly to the gate electrode 12 with a structure like this, so a stable memory transistor with less threshold voltage fluctuation is provided.
|
