发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT
摘要 PROBLEM TO BE SOLVED: To improve the transmission accuracy of signals by connecting a constant current source to between the emitters of the 2nd and 3rd npn transistors which are connected in common to each other and a grounded common potential node. SOLUTION: The constant current source 111 is connected to between the emitters of npn transistors TR Q14 and Q15 which are connected in common to each other and a grounded common potential node. The resistances R11 and R12 are connected to between a power potential node VCC and the emitter of a pnp TR Q11 and to between the node VCC and the emitter of a pnp TR Q12 respectively. The influence of the base currents of TR Q11 and Q12 constructing a current mirror is corrected by a base current correction circuit consisting of the TR Q14 and Q15 and the source 111, and the influence of the base current of the TR Q14 is corrected by a base current correction circuit consisting of an npn TR Q13. In such a constitution, the transmission accuracy of signals can be improved.
申请公布号 JP2000267748(A) 申请公布日期 2000.09.29
申请号 JP19990074326 申请日期 1999.03.18
申请人 TOSHIBA MICROELECTRONICS CORP;TOSHIBA CORP 发明人 OKADA HIROSHI
分类号 G05F3/26;H03F3/343;(IPC1-7):G05F3/26 主分类号 G05F3/26
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