发明名称 |
SEMICONDUCTOR INTEGRATED CIRCUIT |
摘要 |
PROBLEM TO BE SOLVED: To improve the transmission accuracy of signals by connecting a constant current source to between the emitters of the 2nd and 3rd npn transistors which are connected in common to each other and a grounded common potential node. SOLUTION: The constant current source 111 is connected to between the emitters of npn transistors TR Q14 and Q15 which are connected in common to each other and a grounded common potential node. The resistances R11 and R12 are connected to between a power potential node VCC and the emitter of a pnp TR Q11 and to between the node VCC and the emitter of a pnp TR Q12 respectively. The influence of the base currents of TR Q11 and Q12 constructing a current mirror is corrected by a base current correction circuit consisting of the TR Q14 and Q15 and the source 111, and the influence of the base current of the TR Q14 is corrected by a base current correction circuit consisting of an npn TR Q13. In such a constitution, the transmission accuracy of signals can be improved.
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申请公布号 |
JP2000267748(A) |
申请公布日期 |
2000.09.29 |
申请号 |
JP19990074326 |
申请日期 |
1999.03.18 |
申请人 |
TOSHIBA MICROELECTRONICS CORP;TOSHIBA CORP |
发明人 |
OKADA HIROSHI |
分类号 |
G05F3/26;H03F3/343;(IPC1-7):G05F3/26 |
主分类号 |
G05F3/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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