SEMICONDUCTOR DEVICE AND ITS MANUFACTURE

摘要

PROBLEM TO BE SOLVED: To decrease a bulk defective density or interface defective density formed in a crystalline structure semiconductor layer by a method wherein a tensile stress is given to a thin film formed at a substrate side with respect to a crystalline structure semiconductor film, and also a compressive stress is given to the thin film formed at a side opposite to the substrate side. SOLUTION: A first insulation film 202 is formed on a substrate 201 having an insulated surface. Here, a nitrogen-rich nitric silicon oxide film 202a has a tensile stress. A silicon oxide film 204b and a nitric silicon oxide film 204c are formed on a gate insulation film 204a on an active layer 203. A nitric content of the nitric silicon oxide film 204 is set to be 5 atomic mass to 25 atomic mass, and has a compressive stress. Accordingly, the nitrogen-rich nitric silicon oxide film 202a and the nitric silicon oxide film 204c are structured so as to apply a stress on the active layer 203. With this structure, it is possible to decrease effectively a defective density.