发明名称 WRITING CURRENT DRIVING CIRCUIT
摘要 PROBLEM TO BE SOLVED: To make switchable the directions of a writing current at a high speed while suppressing the power consumption. SOLUTION: Base terminals of NPN transistors T1, T2 on the current supply side are connected to a common drain of PMOS and NMOS transistors A1 and B1 and a common drain of PMOS and NMOS transistors C1 and D1, respectively. By allowing an inverted signal of an input signal of the transistors C1, D1 to be inputted to the transistors A1, B1, on/off switching of the transistors T1, T2 is rapidly performed while suppressing the power consumption. PMOS transistors A2, C2 and NMOS transistors B2, D2 are connected in parallel to the PMOS transistors A1, C1 and the NMOS transistors B1, D1 respectively. The PMOS transistors A2, C2 and the NMOS transistors B2, D2 are turned on only during a predetermined period immediately after the on/off switching of the transistors T1, T2.
申请公布号 JP2000268309(A) 申请公布日期 2000.09.29
申请号 JP19990075012 申请日期 1999.03.19
申请人 MITSUBISHI ELECTRIC CORP 发明人 TAKEUCHI TORU;UMEYAMA TAKEHIKO
分类号 G11B5/012;G11B5/02;G11B5/09;H03K17/567;H03K17/66;H03K17/687;(IPC1-7):G11B5/09 主分类号 G11B5/012
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