| 摘要 |
PROBLEM TO BE SOLVED: To provide the semiconductor laser whose operation voltage is small, whose lateral mode is stable and which has high output. SOLUTION: A boundary face on an optical waveguide between a first conductivity-type current block layer 16 and a second conductivity-type embedded layer 17 are installed on a (111)B face facet of an optical waveguide side. Thus, a role of widening an effective current path without widening the width of an active layer 13 is displayed, and a rate that the bearing of the crystal growing face of the second conductivity-type buried layer 17 directly above the optical waveguide applied to the effective current path is a (100) face whose doping efficiency is satisfactory becomes more frequent in the growing process of the second conductivity-type embedded layer 17. Thus, effect that element resistance can be reduced can also be obtained since the doping efficiency of the second conductivity-type embedded layer 17 applied to the effective current path.
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