| 摘要 |
PROBLEM TO BE SOLVED: To obtain a bipolar transistor which can be prevented from increasing in power consumption, and enhanced in operational speed. SOLUTION: A semiconductor device is equipped with an element isolation insulating film with an opening, where a collector electrode layer 2 is exposed, a collector region 7 formed in the opening, an exposed part which is provided to the element isolation insulating film and where the sidewall of the collector region 7 is exposed, a base region 19-2 coming into contact with the collector region 7 through the intermediary of the exposed part, and an emitter region 22 which is formed on the base region 19-2.
|
