| 摘要 |
PROBLEM TO BE SOLVED: To obtain a method and device for monitoring static damage, capable of readily testing the presence or absence of the static damage caused, when a processing is effected by use of ions of ion implantation, etc. SOLUTION: A static damage monitor is used which is constituted by a plurality of monitor element devices 32 to 38 arrayed on a semiconductor substrate 11. Each monitor element device is constituted by field oxide films 39, 40 formed on the semiconductor substrate; a thin oxide film 41 formed in a surface region of the semiconductor substrate 11 enclosed by the field oxide films 39, 40, a resist island 15 formed island-like on this thin oxide film 41, and a resist film 13 formed on the field oxide films 39, 40. An interval between the end face of the resist island 15 in the respective monitor element devices 32 to 38 and the field oxide films 39, 40 is changed incrementally along the array of the respective monitor element devices.
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