| 摘要 |
PROBLEM TO BE SOLVED: To obtain a method of manufacturing a semiconductor device, where an oxynitride film which is high in nitrogen concentration and small in thickness is formed on a wafer by thermally decomposing N2O gas. SOLUTION: N2O gas is thermally decomposed to form an oxynitride film on a wafer in the manufacture of a semiconductor device, where a gas such as CH4, C2H5, or NH3 which reacts with O2 gas to produce reaction products, which are hardly conductive to the oxidation of the surface of a wafer is supplied together with NO2. By this setup, an oxynitride film which is high in nitrogen concentration and small in thickness can be formed on the surface of a wafer by thermally decomposing N2O.
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