| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and a method for manufacturing it wherein a layout area of a semiconductor element which requires a high resistance is reduced. SOLUTION: An inter-layer insulating film 18 is coated over the entire surface of the upper layer of a salicide semiconductor element and non-salicide one, a contact hole 20 is opened at the position of the inter-layer insulating film 18 corresponding to the formation position of salicide semiconductor element and non-salicide one, and after a barrier metal 22 is coated on the internal surface of the inter-layer insulating film 18 and the contact hole 20, the barrier metal 22 which is coated on the internal surface of the contact hole 20 opened corresponding to the formation position of the non-salicide semiconductor element is removed.
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