| 摘要 |
PROBLEM TO BE SOLVED: To effectively improve an electric stroke and to effectively avoid shorting between light emitting elements. SOLUTION: In a semiconductor light emitting device, plural semiconductor light emitting parts M1, M2, M3, etc., are formed in a semiconductor substrate 21. Electrodes A1, A2 and A3, etc., on one side of the semiconductor light emitting parts and bonding pads PD1, PD2, PD3, etc., which are electrically led from the electrodes and to which outer leads are connected are formed on one main face of the semiconductor substrate 21. A high resistance isolation regions are formed between adjacent conduction layers among conduction layers leading electricity to the bonding pads from the electrodes, making it face the main face of the semiconductor substrate.
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