发明名称 METHOD AND DEVICE FOR PRODUCTION OF PHASE TRANSITION RECORDING MEDIUM
摘要 PROBLEM TO BE SOLVED: To obtain a method and a device for the production of a phase transition type recording medium in which a crystal space can be directly and fast formed in a practical driving process in the amorphous state as deposited in the production process without especially requiring initialization. SOLUTION: When DC voltage Vdc applied on a target and sputtering threshold voltage Vth of the structural element of the target are controlled to satisfy Vth<Vdc<=10 Vth on depositing a recording film by sputtering, the energy of sputtering particles emitted from the target decreases so that the energy of sputtering particles incident to the substrate 6 also decreases and the cooling rate of the sputtering particles on the substrate 6 decreases to increase the holding time for crystallization from the vapor phase to the solid phase and to form fine crystal nuclei. By the presence of the fine crystal nuclei, the film can be completely crystallized by only one irradiation of light.
申请公布号 JP2000268420(A) 申请公布日期 2000.09.29
申请号 JP19990066564 申请日期 1999.03.12
申请人 TOSHIBA CORP 发明人 ICHIHARA KATSUTARO;ASHIDA SUMIO
分类号 G11B7/26;C23C14/06;C23C14/34;(IPC1-7):G11B7/26 主分类号 G11B7/26
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