| 摘要 |
<p>PROBLEM TO BE SOLVED: To obtain capacitors of a large capacitance without decreasing the opening rate by forming a transparent conductive film as the electrode of holding capacitors in an active matrix type liquid crystal display device, and to prevent short circuits between the electrodes of the holding capacitors and the pixel electrodes with great certainly. SOLUTION: A transparent conductive film 113 is formed by a CVD method on a BCB flattering film which covers pixel TFTs 20, and contact holes are formed in the conductive film 113. Then an insulating film 114 of silicon oxide is formed by a CVD method on the transparent conductive film 113, and contact holes are formed in the insulating film 114 and the flattering film 112 to reach a drain electrodes 108, on which pixel electrodes 115 are formed. Thus, holding capacitors 22 with the transparent conducive film 113 and the pixel electrodes 115 as its electrodes and with the insulating film 114 as the dielectric material are formed. Since the insulating film 114 is formed by the CVD method, a short circuit between the transparent conductive film 113 and the pixel electrodes can be prevented in the contact hole.</p> |
