| 摘要 |
PROBLEM TO BE SOLVED: To prevent deterioration of shapes of a connection hole and a wiring groove by a method wherein increase in an etching amount by sputtering for an angular part of an opening edge of the connection hole opened in an insulation film is suppressed. SOLUTION: When a connection hole 7 and a wiring groove 8 are simultaneously formed, etching is carried out until the connection hole 7 reaches a lower layer wiring 1. At that time, part of a Si3N3 film 5 remaining behind in a side wall of the connection hole 7 which is a second etching stopper film is also etched by sputtering. However, until ending the etching, as the Si3N3 film 5 remaining behind in the side wall of the connection hole 7 exists so as to erect upwardly of a first etching stopper film 3, it is prevented that an angular part of an opening edge of the connection hole 7 provided in a first etching stopper film 3 is over etched, and it is possible to open the connection hole 7 with the substantially same diameter. Thus, it is possible to attain the connection hole 7 and wiring groove 8 having a superior shape.
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