| 摘要 |
PROBLEM TO BE SOLVED: To form a dense pattern and a coarse pattern with good balance, high resolution and high dry etching resistance while preventing missing of an isolated pattern by using a positive photoresist compsn. consisting of a resin having at least three specified structural units, a compd. which produces an acid by irradiation of active rays or radiation, and a solvent. SOLUTION: This compsn. contains a copolymer A having the structural units expressed by formulae I, II and III, a compd. which produces an acid by irradiation of active rays or radiation, and a solvent. In formulae I to III, each of R1 and R2 may be same or different from each other and is a hydrogen atom or methyl group, R3 is a tertiary alkyl group which may have substituents, each of R'1 and R'2 may be same or different from each other and is a hydrogen atom or 1-4C alkyl group, W is a divalent org. group, R'3 is a chain alkyl group which may have substituents, cyclic alkyl group which may have substituents, aryl group which may have substituents or aralkyl group which may have substituents. |
