| 摘要 |
PROBLEM TO BE SOLVED: To make a pattern sidewall structure perpendicular with respect to the upper surface of a substrate, and hardly generate damages in a pattern edge of a ferroelectric material. SOLUTION: In a capacitance element 10, a lower electrode 36, a ferroelectric film 38 and an upper electrode 40 are laminated in this order on a base 12. A side surface 36a of the lower electrode and a side surface 40a of the upper electrode are positioned outside the side surface 38a of the ferroelectric film. That is, with respect to size in a direction parallel to an upper surface 12a of the base, the ferroelectric film is smaller as compared with the lower electrode and the upper electrode. The side surface of the ferroelectric film is covered with a sidewall 46, having a side surface 46a practically perpendicular to the upper surface of the base. The sidewall is arranged in a state which is in contact with the side surface of the ferroelectric film, the lower surface of the upper electrode in a part protruding from a pattern of the ferroelectric film, and the upper surface of the lower electrode in a part protruding from the pattern of the ferroelectric film. |
