| 摘要 |
PROBLEM TO BE SOLVED: To prevent troubles of short circuit which is caused by bringing adjacent electrodes into contact with an hemispherical grained Si(HSG-Si), while high density and increase in the capacity of a memory cell are simultaneously realized. SOLUTION: This manufacturing method of a semiconductor device is provided with a step for forming a plurality of electrode forming holes 18 on a silicon substrate 11, a step for growing cylindrical amorphous silicon layers 17a, 17b whose impurity concentrations are different on the outer wall side and the inner wall side in the electrode forming holes 18, a step for forming respective grain nuclei on the outer wall and the inner wall of the amorphous silicon layers, and a step for forming a first and a second hemispherical grain groups 20a, 20b whose grain diameters are mutually different, on the inner wall and the outer wall of the amorphous silicon layers, respectively. |
