ELECTRODE STRUCTURE, MANUFACTURE THEREOF AND SEMICONDUCTOR LIGHT EMITTING DEVICE

摘要

PROBLEM TO BE SOLVED: To provide an electrode structure with which the parasitic resistance between it and its base can be reduced, the manufacture thereof and a semiconductor light emitting device capable of using high frequencies. SOLUTION: This electrode structure has a conductive film 24c formed on a base substrate 10 via an insulation film. The insulation film has polyimide posts 36, a first film 38 which is formed on the side faces of the posts 36 and made of an insulation material harder than the polyimide, and a second polyimide film 40 embedded among the posts 36 with the film 38 formed on the side faces.