| 摘要 |
PROBLEM TO BE SOLVED: To obtain the manufacturing method of a semiconductor device, in which a processed layer used as the layer having a protective function in an after etching process can be accurately processed. SOLUTION: This manufacturing method comprises a first process, where an organic silicon layer 4 which contains an organic silicon compound is formed on a processed layer 3, a second process where the organic silicon layer 4 is patterned, a third process where the processed layer 3 is etched using the organic silicon layer 4 as a mask, and a fourth process where oxygen ions or radicals are fed to the organic silicon layer 4 so as to turn it into a silicon oxide layer 4'.
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