| 摘要 |
PROBLEM TO BE SOLVED: To conduct satisfactory treatment at conducting film formation, etching or other treatment for a semiconductor wafer, for instance, by using plasma. SOLUTION: An electron addition type mass spectrometer is connected to a vacuum vessel for conducting gas treatment on a semiconductor wafer. The gas in the vacuum vessel taken into the mass spectrometer, electrons are added therein to particles in the gas and counting values for negative ions of particles, e.g. specific radicals which are ionized are measured. When electron energy is changed on here, the count values are changed, and based on the peak values thereof, the density of the radicals is estimated. Based on the results of this estimate, fine control of process conditions such as microwave power, pressure and flow rate is conducted.
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