| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide an electro-optical device capable of increasing a numerical aperture of pixels, increasing storage capacitance at the same time and displaying the high quality image, and to provide an easier manufacturing method of such an electro-optical device. SOLUTION: This electro-optical device is provided with TFTs 30, data lines 6a, scanning lines 3a, capacitance lines 3b, and pixel electrodes 9a on a substrate. The pixel electrodes and the TFTs are connected by two contact holes via a 1st barrier layer 80a. Under the TFTs 30, a 1st conductive shielding film 11a is arranged. 1st storage capacitance 70a is formed of a part of a semiconductor layer and the capacitance lines, 2nd storage capacitance 70b is formed of the capacitance lines and a part of a 1st barrier layer, and 3rd storage capacitance 70c is formed of a part of the semiconductor layer and the 1st shielding film, respectively.</p> |
