| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit device, having a structure wherein the leads of a wiring layer hardly break, even if it is formed on a portion where trench isolations were removed. SOLUTION: This semiconductor integrated circuit device comprises shallow trenches 7, formed on a p-type Si substrate 1 for sectioning element regions 8, a TEOS shallow trench isolation(STI) 9 formed in the trenches 7, a laminated structure 14, including at least a gate oxide film 2 and word lines WL, n-type source regions S and n-type drain regions D formed on the element regions 8 at both sides of he laminated structure 14, recesses 22 formed in the TEOS (STI) 9 in the trenches, to thereby expose the source regions S and having the lowest bottom face which is lower than the element region 8 surface, and a connecting conducive layer 19 for electrically connecting the source regions S to each other formed in the recesses 22. |
