Verfahren zur Herstellung dünner gleichförmiger Oxidschichten auf Silizium-Oberflächen

摘要

The invention relates to a method for producing thin, uniform oxide layers on silicon surfaces. Within the next 10 years, the lateral dimensions of silicon components will be reduced to an interatomic distance of approximately 200 and the vertical extensions of the doping concentration profile to an interatomic distance of approximately 50. This requires, among other things, atomically smooth ultra-thin oxide layers on silicon surfaces, for example, gate-oxide layers. The invention thereby aims to provide a method for producing thin, uniform oxide layers on silicon surfaces which provides oxides with a thickness of less than 6 nm. This is achieved by oxidising a silicon surface of increased evenness using an increased tensile stress.