| 摘要 |
<p>The invention concerns an X-ray imaging device comprising at least a detecting matrix made of semiconductor material, including pixels (11), to convert the incident X-ray photons into electrical charges, and a silicon-based panel (10) for reading the electrical charges, comprising a plurality of electronic devices, each electronic device being incorporated at a pixel (11), wherein each detecting matrix is provided by a semiconductor material layer vapour-phase deposited on the panel for reading electrical charges. The invention also concerns a method for making such an imaging device.</p> |
