NOVEL TRANSISTOR WITH METAL GATE AND BURIED COUNTER-DOPED CHANNEL AND METHOD FOR MAKING SAME

摘要

The invention concerns a transistor comprising a silicon substrate (1) with a top surface coated with a thin gate dielectric layer (5) and wherein are formed source and drain regions (2, 3) defining between them a buried counter-doped channel region (4) having a predetermined minimal length, a metal gate (6) on the thin gate dielectric layer (5) above the channel region (4). The invention is characterised in that it comprises a thin dielectric layer (11) arranged between the source and drain regions (2, 3) and immediately adjacent beneath the channel region (4), said thin dielectric layer (11) having a length at least equal to a predetermined minimum channel length. The invention is applicable to MOSFET transistors.