| 摘要 |
<p>A resist developer containing an organic solvent having a boiling point of more than 180 °C under normal pressure for developing a resist material containing a copolymer of a styrene monomer and an acrylic monomer and used to form a resist pattern by an electron beam, and a method for forming a resist pattern by forming a latent image on a photosensitive film of such a resist material by applying an electron beam and performing development by a paddle method using such a developer. By using the resist developer, a resist pattern is formed on a substrate with suppressed pattern dimension error and good dimension stability even by even development by a paddle method.</p> |
