| 摘要 |
<p>A heat treating method for a thin film, which heat-treats a thin film having a metal silicide layer containing phosphorus atoms and which comprises a temperature raising step, a temperature maintaining step and a temperature lowering step, wherein a thin film is heated in an oxidizing gas or in a gaseous atmosphere containing an oxidizing gas at least in the temp. raising step. An oxide film formed on a thin film during the temp. raising step prevents a release of phosphorus atoms.</p> |
