ROOM TEMPERATURE WET CHEMICAL GROWTH PROCESS OF SiO BASED OXIDES ON SILICON

摘要

Disclosed is a room temperature wet chemical growth (RTWCG) process of SiO-based insulator coatings on silicon substrates for electronic and photonic (optoelectronic) device applications. The process includes soaking the Si substrates into the growth solution. The process utilizes a mixture of H2SiF6, N-n-butylpyridinium chloride, redox Fe2+/Fe3+ aqueous solutions, and a homogenous catalyst.