| 摘要 |
PROBLEM TO BE SOLVED: To secure a large space in a stable manner under the eaves of a T-shaped gate electrode, to reduce a parasitic capacity of a gate, and to achieve a low minimum noise index and high gain, by controlling the filling of an insulation film under the eaves of the T-shaped gate electrode. SOLUTION: First insulation films 4 are formed in the vicinity of eaves 7a of a T-shaped gate electrode 7. Upon forming a second insulation film 8 the formation thereof is suppressed under the eaves 7a so as to reduce the filling of the second insulation film 8 between the first insulation films 4 and the eaves 7a. Thus, it is possible to secure large spaces 9 in a stable manner under the eaves 7a of the gate electrode 7. Moreover, with the spaces 9, it is possible to reduce a parasitic capacity of the gate electrode 7 so as to achieve a low minimum noise index and high gain. Further, the surface of an activation layer 2 in a recess 6 is protected by the insulation layer 8 so as to cause no problem of reliability that includes fluctuations of a gate pressure.
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