| 摘要 |
<p>Layers of metal lines (L1, L2, L3) and layers of storage cells are mounted alternatingly on top of each other. The storage cells have a diode and a storage element connected in series relative thereto. The storage element has a layer structure with magnetoresistive effect. The diode has a layer structure consisting of at least two metal layers (M1, M2) and an insulating layer (I1) mounted between the latter. The layer structure of the storage element and the layer structure of the diode are placed one on top of the other. The metal lines (L1, L2) of each of the layers run parallel to each other. The metal lines (L1, L2) of adjacent layers run crosswise in relation to one another.</p> |
