DIFFUSION BARRIER MATERIALS WITH IMPROVED STEP COVERAGE

摘要

A chemical vapor deposition process is provided for the formation of conformal layers containing metal nitrides. A film consisting mainly of titanium nitride is deposited from a vapor mixture of tetrakis(diethylamido)titanium, ammonia and trimethylamine on a surface heated to about 350 DEG C. The process can be used to form diffusion barrier layers between metals and silicon in computer microcircuits.