发明名称 |
HIGH-EFFICIENCY SOLAR CELL AND METHOD FOR FABRICATION |
摘要 |
<p>A high-efficiency 3- or 4-junction solar cell is disclosed with a theoretical AM0 energy conversion efficiency of about 40%. The solar cell includes p-n junctions formed from indium gallium arsenide nitride (InGaAsN), gallium arsenide (GaAs) and indium gallium aluminum phosphide (InGaAlP) separated by n-p tunnel junctions. An optional germanium (Ge) p-n junction can be formed in the substrate upon which the other p-n junctions are grown. The bandgap energies for each p-n junction are tailored to provide substantially equal short-circuit currents for each p-n junction, thereby eliminating current bottlenecks and improving the overall energy conversion efficiency of the solar cell. Additionally, the use of an InGaAsN p-n junction overcomes super-bandgap energy losses that are present in conventional multi-junction solar cells. A method is also disclosed for fabricating the high-efficiency 3- or 4-junction solar cell by metal-organic chemical vapor deposition (MOCVD).</p> |
申请公布号 |
EP1038322(A1) |
申请公布日期 |
2000.09.27 |
申请号 |
EP19980963772 |
申请日期 |
1998.11.24 |
申请人 |
SANDIA CORPORATION |
发明人 |
HOU, HONG, Q.;REINHARDT, KITT C. |
分类号 |
H01L31/04;H01L31/0216;H01L31/0304;H01L31/0687;H01L31/18;(IPC1-7):H01L31/00 |
主分类号 |
H01L31/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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